APTC60DAM18CT APTC60DAM18CT ? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 1 ? 7 cr1 vbus nt c2 0/vbus vbus sense g2 s2 nt c1 q2 out vbus out out ntc2 ntc1 0/vb us s2 s2 g2 g2 vbus sense absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. symbol parameter max ratings unit v dss drain - source breakdown voltage 600 v t c = 25c 143 i d continuous drain current t c = 80c 107 i dm pulsed drain current 572 a v gs gate - source voltage 30 v r dson drain - source on resistance 18 m p d maximum power dissipation t c = 25c 833 w i ar avalanche current (repetitive and non repetitive) 20 a e ar repetitive avalanche energy 1 e as single pulse avalanche energy 1800 mj v dss = 600v r dson = 18m max @ tj = 25c i d = 143a @ tc = 25c application ac and dc motor control switched mode power supplies power factor correction features - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated fwd sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf kelvin source for easy drive very low stray inductance - symmetrical design - lead frames for power connections internal thermistor for temperature monitoring high level of integration benefits outstanding performance at high frequency operation direct mounting to heatsink (isolated package) low junction to case thermal resistance solderable terminals both for power and signal fo r easy pcb mounting low profile boost chopper sic fwd diode super junction mosfet power module
APTC60DAM18CT APTC60DAM18CT ? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 2 ? 7 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv dss drain - source breakdown voltage v gs = 0v, i d = 1000a 600 v v gs = 0v,v ds = 600v t j = 25c 100 i dss zero gate voltage drain current v gs = 0v,v ds = 600v t j = 125c 1000 a r ds(on) drain ? source on resistance v gs = 10v, i d = 71.5a 18 m v gs(th) gate threshold voltage v gs = v ds , i d = 4ma 2.1 3 3.9 v i gss gate ? source leakage current v gs = 20 v, v ds = 0v 200 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 28 c oss output capacitance 10.2 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 0.85 nf q g total gate charge 1036 q gs gate ? source charge 116 q gd gate ? drain charge v gs = 10v v bus = 300v i d = 143a 444 nc t d(on) turn-on delay time 21 t r rise time 30 t d(off) turn-off delay time 283 t f fall time inductive switching @ 125c v gs = 15v v bus = 400v i d = 143a r g = 1.2 84 ns e on turn-on switching energy 1608 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 400v i d = 143a, r g = 1.2 ? 3920 j e on turn-on switching energy 2630 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 400v i d = 143a, r g = 1.2 ? 4824 j in accordance with jedec standard jesd24-1. diode ratings and characteristics symbol characteristic test conditions min typ max unit i f(av) maximum average forward current 50% duty cycle tc = 125c 100 a t j = 25c 1.6 1.8 v f diode forward voltage i f = 100a t j = 175c 2.0 2.4 v q c total capacitive charge i f = 100a, v r = 300v di/dt =2400a/s 140 nc f = 1mhz, v r = 200v 650 q total capacitance f = 1mhz, v r = 400v 500 pf
APTC60DAM18CT APTC60DAM18CT ? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 3 ? 7 thermal and package characteristics symbol characteristic min typ max unit transistor 0.15 r thjc junction to case diode 0.28 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 4.7 n.m wt package weight 160 g temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 68 k b 25/85 t 25 = 298.16 k 4080 k
t t b r r t 1 1 exp 25 85 / 25 25 package outline t: thermistor temperature r t : thermistor value at t
APTC60DAM18CT APTC60DAM18CT ? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 4 ? 7 typical coolmos performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 4v 4.5v 5v 5.5v 6v 6.5v 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&10v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 90 180 270 360 450 540 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 0 40 80 120 160 200 240 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 71.5a 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTC60DAM18CT APTC60DAM18CT ? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 5 ? 7 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 143a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area dc line 10 ms 1 ms 100 s 1 10 100 1000 1101001000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r ds on single pulse t j =150c ciss crss coss 10 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =120v v ds =300v v ds =480v 0 2 4 6 8 10 12 14 0 200 400 600 800 1000 1200 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =143a t j =25c
APTC60DAM18CT APTC60DAM18CT ? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 6 ? 7 t j =25c t j =150c 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage delay times vs current td(on) td(off) 0 50 100 150 200 250 300 350 0 40 80 120 160 200 240 i d , drain current (a) t d(on) and t d(off) (ns) v ds =400v r g =1.2 ? t j =125c l=100h rise and fall times vs current t r t f 0 20 40 60 80 100 120 0 40 80 120 160 200 240 i d , drain current (a) t r and t f (ns) v ds =400v r g =1.2 ? t j =125c l=100h switching energy vs current e on e off 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 i d , drain current (a) switching energy (mj) v ds =400v r g =1.2 ? t j =125c l=100h e on e off 0 5 10 15 20 02.557.51012.5 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =400v i d =143a t j =125c l=100h 0 20 40 60 80 100 120 140 30 50 70 90 110 130 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =400v d=50% r g =1.2 ? t j =125c
APTC60DAM18CT APTC60DAM18CT ? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 7 ? 7 typical sic diode performance curve maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 50 100 150 200 00.511.522.533.5 v f forward voltage (v) i f forward current (a) reverse characteristics t j =25c t j =75c t j =125c t j =175c 0 500 1000 1500 2000 200 300 400 500 600 700 800 v r reverse voltage (v) i r reverse current (a) capacitance vs.reverse voltage 0 1000 2000 3000 4000 1 10 100 1000 v r reverse voltage c, capacitance (pf) ?coolmos? comprise a new family of transistors developed by infineon technologies ag. ?coolmos? is a trademark of infineon technologies ag?. apt reserves the right to change, without notice, the specifications and information contained herein apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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